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Nanostructural Superconducting Materials for Fault Current Limiters and Cryogenic Electrical Machines

机译:用于故障限流器和纳米结构的纳米结构超导材料   低温电机

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摘要

Materials of the Y-Ba-Cu-O (melt-textured YBa2Cu3O7-d-based materials orMT-YBCO) and Mg-B-O (MgB2-based materials) systems with high superconductingperformance, which can be attained due to the formation of regularlydistributed nanostructural defects and inhomogenities in their structure can beeffectively used in cryogenic technique, in particular in fault currentlimiters and electrical machines (electromotors, generators, pumps for liquidgases, etc.). The developed processes of high-temperature (900-800 oC)oxygenation under elevated pressure (16 MPa) of MT-YBCO and high-pressure (2GPa) synthesis of MgB2-based materials allowed us to attain high SC (criticalcurrent densities, upper critical fields, fields of irreversibility, trappedmagnetic fields) and mechanical (hardness, fracture toughness, Young modulus)characteristics. It has been shown that the effect of materials propertiesimprovement in the case of MT-YBCO was attained due to the formation of hightwin density (20-22 micron-1), prevention of macrockracking and reduction (by afactor of 4.5) of microcrack density, and in the case of MgB2-based materialsdue to the formation of oxygen-enriched as compared to the matrix phasefine-dispersed Mg-B-O inhomogenities as well as inclusions of higher borideswith near-MgB12 stoichiometry in the Mg-B-O matrix (with 15-37 nm average grainsizes). The possibility is shown to obtain the rather high Tc (37 K) andcritical current densities in materials with MgB12 matrix (with 95 percent ofshielding fraction as calculated from the resistant curve).
机译:Y-Ba-Cu-O(熔融织构的YBa2Cu3O7-d基材料或MT-YBCO)和Mg-BO(MgB2基材料)系统的材料具有很高的超导性能,这是由于形成规则分布的纳米结构而获得的其结构中的缺陷和不均匀性可有效地用于低温技术中,特别是在故障限流器和电机(电动机,发电机,液化气泵等)中。 MT-YBCO在高压(16 MPa)下高温(900-800 oC)氧化和基于MgB2的材料的高压(2GPa)合成的发达工艺使我们能够获得高SC(临界电流密度,上临界场,不可逆场,受困磁场)和机械(硬度,断裂韧性,杨氏模量)特性。已经表明,由于形成了高孪晶密度(20-22微米-1),防止了宏观裂纹并降低了微裂纹密度(降低了4.5倍),MT-YBCO的材料性能得到了改善。对于基于MgB2的材料,由于与基质相细分散的Mg-BO不均匀性形成富氧状态,以及在Mg-BO基质中含有接近MgB12化学计量的较高硼化物(15-37纳米平均粒径)。已显示在具有MgB12基质的材料中获得相当高的Tc(37 K)和临界电流密度的可能性(根据电阻曲线计算,其屏蔽分数为95%)。

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